Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

摘要

High performance enhancement mode semiconducting carbon nanotube field-effecttransistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, highdielectric constant HfO2 films as gate insulators, and electrostatically dopednanotube segments as source/drain electrodes. The combination of these elementsaffords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allowsfor low OFF currents and suppressed ambipolar conduction. The doped source anddrain approach resembles that of MOSFETs and can impart excellent OFF states tonanotube FETs under aggressive vertical scaling. This presents an importantadvantage over devices with metal source/drain, or devices commonly referred toas Schottky barrier FETs.